Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi4Ti3O12 thin films

被引:64
作者
Park, BH [1 ]
Hyun, SJ
Moon, CR
Choe, BD
Lee, J
Kim, CY
Jo, W
Noh, TW
机构
[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[2] Seoul Natl Univ, Condensed Matter Res Inst, Seoul 151742, South Korea
[3] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea
[4] LG Corp Inst Technol, Seoul 137140, South Korea
关键词
D O I
10.1063/1.368666
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial Bi4Ti3O12 (BTO) thin films were deposited on MgO(001) substrates using Pt layers as top and bottom electrodes. In spite of the apparently symmetric capacitor structure, polarization-voltage measurements revealed strong imprint failures and current-voltage measurements showed rectifying behaviors. Imprint pulse tests with a 5 V dc bias and post-annealing treatments suggested that the asymmetric behaviors should be due to interfacial states induced by thermal processes. To probe the interfacial states, capacitance-voltage (C-V) measurements were performed. By fitting the C-V data with a model which describes the Pt/BTO/Pt structure as a series circuit composed of three capacitors, built-in voltages at the top and the bottom interfaces could be determined. Difference in the built-in voltages could explain the imprint failures and the rectifying behaviors. The interfacial states in the BTO capacitors were controlled by varying electrode materials. (C) 1998 American Institute of Physics. [S0021-8979(98)05120-2].
引用
收藏
页码:4428 / 4435
页数:8
相关论文
共 25 条
[1]  
ABDELGHAFAR KK, 1996, APPL PHYS LETT, V69, P3188
[2]   FERROELECTRIC SCHOTTKY DIODE [J].
BLOM, PWM ;
WOLF, RM ;
CILLESSEN, JFM ;
KRIJN, MPCM .
PHYSICAL REVIEW LETTERS, 1994, 73 (15) :2107-2110
[3]  
COX PA, 1977, ELECT STRUCTURE CHEM, P196
[4]   FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].
DEARAUJO, CAP ;
CUCHIARO, JD ;
MCMILLAN, LD ;
SCOTT, MC ;
SCOTT, JF .
NATURE, 1995, 374 (6523) :627-629
[5]   ELECTRICAL-PROPERTIES OF PARAELECTRIC (PB0.72LA0.28)TIO3 THIN-FILMS WITH HIGH LINEAR DIELECTRIC PERMITTIVITY - SCHOTTKY AND OHMIC CONTACTS [J].
DEY, SK ;
LEE, JJ ;
ALLURI, P .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (6A) :3142-3152
[6]  
EATON SS, 1988, P IEEE INT SOL STAT, P130
[7]   SURFACE-DEFECTS OF TIO2(110) - A COMBINED XPS, XAES AND ELS STUDY [J].
GOPEL, W ;
ANDERSON, JA ;
FRANKEL, D ;
JAEHNIG, M ;
PHILLIPS, K ;
SCHAFER, JA ;
ROCKER, G .
SURFACE SCIENCE, 1984, 139 (2-3) :333-346
[8]   The evaluation of SrBi2Ta2O9 films for ferroelectric memories [J].
Gutleben, CD .
FERROELECTRIC THIN FILMS V, 1996, 433 :109-118
[9]   Band alignments of the platinum/SrBi2Ta2O9 interface [J].
Gutleben, CD .
APPLIED PHYSICS LETTERS, 1997, 71 (23) :3444-3446
[10]   LEAKAGE CURRENT BEHAVIORS OF EPITAXIAL AND PREFERENTIALLY ORIENTED BI4TI3O12 THIN-FILMS GROWN ON LA0.5SR0.5COO3 BOTTOM ELECTRODES [J].
JO, W ;
KIM, KH ;
NOH, TW .
APPLIED PHYSICS LETTERS, 1995, 66 (23) :3120-3122