Voltage shift effect on retention failure in ferroelectric memories

被引：27

作者：

Nakao, K

Judai, Y

Azuma, M

Shimada, Y

Otsuki, T

机构：

[1] Matsushita Elect Ind Co Ltd, Elect Res Lab, Osaka 5691193, Japan

[2] Matsushita Elect Ind Co Ltd, ULSI Proc Technol Dev Ctr, Minami Ku, Kyoto 6018413, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 9B期

关键词：

ferroelectric memory; SrBi2(Ta; Nb)(2)O-9; retention; voltage shift;

D O I：

10.1143/JJAP.37.5203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the origin of retention failure in ferroelectric memories (FeRAMs) with SrBi2(Ta; Nb)(2)O-9 (SBTN) memory cell capacitors by considering the time-dependent behavior of polarization vs. voltage (P-V) curves of the capacitors during high-temperature storage. Since the SBTN capacitors exhibited no marked decrease in the nonvolatile component of polarization even after high-temperature storage, we focused on the effect of voltage shift observed in P-V curves. We calculated bitline voltage along the storage from the P-V curves and the bitline capacitance, and successfully estimated a decrease in the bitline voltage, which is in agreement with the retention failure in FeRAMs. In addition, the calculation indicated that the lifetime limited by the retention failure in FeRAMs with SBTN capacitors at 125 degrees C exceeds 10 years.

引用

页码：5203 / 5206

页数：4

共 9 条

[1]

Asari K, 1998, IEICE T ELECTRON, VE81C, P488

[2] Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family) [J].

Fujii, E ;

Otsuki, T ;

Judai, Y ;

Shimada, Y ;

Azuma, M ;

Uemoto, Y ;

Nagano, Y ;

Nasu, T ;

Izutsu, Y ;

Matsuda, A ;

Nakao, K ;

Tanaka, K ;

Hirano, K ;

Ito, T ;

Mikawa, T ;

Kutsunai, T ;

McMillan, LD ;

de Araujo, CAP .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :597-600

[3]

Hadnagy T. D., 1994, Integrated Ferroelectrics, V4, P217, DOI 10.1080/10584589408017024

[4]

MIHARA T, 1992, P 4 INT S INT FERR, P137

[5] FERROELECTRIC MEMORIES [J].

SCOTT, JF ;

DEARAUJO, CAP .

SCIENCE, 1989, 246 (4936) :1400-1405

[6] Retention characteristics of a ferroelectric memory based on SrBi2(Ta,Nb)(2)O-9 [J].

Shimada, Y ;

Azuma, M ;

Nakao, K ;

Chaya, S ;

Moriwaki, N ;

Otsuki, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B) :5912-5916

[7] Integration technology of ferroelectrics and the performance of the integrated ferroelectrics [J].

Shimada, Y ;

Nagano, Y ;

Fujii, E ;

Azuma, M ;

Uemoto, Y ;

Sumi, T ;

Judai, Y ;

Hayashi, S ;

Moriwaki, N ;

Nakane, J ;

Otsuki, T ;

deAraujo, CAP ;

McMillan, LD .

INTEGRATED FERROELECTRICS, 1995, 11 (1-4) :229-245

[8] VOLTAGE SHIFTS AND IMPRINT IN FERROELECTRIC CAPACITORS [J].

WARREN, WL ;

DIMOS, D ;

PIKE, GE ;

TUTTLE, BA ;

RAYMOND, MV ;

RAMESH, R ;

EVANS, JT .

APPLIED PHYSICS LETTERS, 1995, 67 (06) :866-868

[9]

WARREN WL, 1996, P MAT RES SOC S SAN, P257

← 1 →