Raman spectroscopy of strained GeSi alloys deposited on Ge substrates

被引：5

作者：

Gu, S

Qin, L

Zhang, R

Zhu, X

Zheng, Y

机构：

[1] Department of Physics, Nanjing University

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1996年 / 62卷 / 04期

关键词：

D O I：

10.1007/BF01594238

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Raman scattering method has been successfully used to investigate the properties of GeSi alloys deposited on Ge substrates in this paper. The effect of Si composition and strain in the GeSi alloy on the Raman shifts of Ge-Ge, Ge-Si and Si-Si phonon modes is studied. The relationship between them have been derived by the assumption that the Raman shifts is nearly linear with Si composition and strain in the GeSi alloys. The experimental data show reasonable agreement with the fits.

引用

页码：387 / 390

页数：4

共 11 条

[1] ELECTRON INTERSUBBAND ABSORPTION IN GE/SI1-XGEX QUANTUM-WELL STRUCTURES GROWN ON SI(001) SUBSTRATE [J].