STRAIN-SHIFT COEFFICIENTS FOR PHONONS IN SI1-XGEX EPILAYERS ON SILICON

被引:138
作者
LOCKWOOD, DJ
BARIBEAU, JM
机构
[1] Institute for Microstructural Sciences, National Research Council
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 15期
关键词
D O I
10.1103/PhysRevB.45.8565
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The measurement of the strain coefficients for the three longitudinal-optical phonons in strained Si1-xGex (0 < x < 0.35) molecular-beam-epitaxy-grown epilayers on (100) Si is reported. Strain in the epilayers was varied by annealing metastable pseudomorphically grown epilayers at various temperatures and was measured by double-crystal x-ray diffractometry. The strain-shift coefficients for the phonons were obtained from Raman-scattering measurements of the annealed specimens. For all compositions it was found that the Si-Si phonon frequencies vary linearly with strain. The strain-shift coefficient, however, showed a small composition dependence, varying from about - 750 cm-1 at x = 0.08 to about - 950 cm-1 at x = 0.35, corresponding to a stress factor-tau almost-equal-to 0.4 + 0.57x + 0.13x2 cm-1/kbar for this vibration. The magnitude of the corresponding coefficients for the Si-Ge and Ge-Ge lines are slightly less than that of the Si-Si line, and vary in a similar way with x.
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收藏
页码:8565 / 8571
页数:7
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