INDIRECT BAND-GAP AND BAND ALIGNMENT FOR COHERENTLY STRAINED SIXGE1-X BULK ALLOYS ON GERMANIUM (001) SUBSTRATES

被引：42

作者：

PEOPLE, R

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2508

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2508 / 2510

页数：3

共 8 条

[1] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[2] BEAN JC, 1985, 1ST P INT S SIL MOL, P337
[3] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS
BRAUNSTEIN, R
MOORE, AR
HERMAN, F
[J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710
[4] DAVIDSON BA, 1986, B AM PHYS SOC, V31, P533
[5] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS
HENSEL, JC
FEHER, G
[J]. PHYSICAL REVIEW, 1963, 129 (03): : 1041 - &
[6] PAUL W, 1959, J PHYS CHEM SOLIDS, V6, P6
[7] INDIRECT BAND-GAP OF COHERENTLY STRAINED GEXSI1-X BULK ALLOYS ON (001) SILICON SUBSTRATES
PEOPLE, R
[J]. PHYSICAL REVIEW B, 1985, 32 (02): : 1405 - 1408
[8] THEORETICAL-STUDY OF SI/GE INTERFACES
VAN DE WALLE, CG
MARTIN, RM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1256 - 1259