Investigation of nanoscale structure in digital layers of Mn/GaAs and MnGa/GaAs

被引：12

作者：

Kioseoglou, G ^{[1
]}

Kim, S

Soo, YL

Chen, X

Luo, H

Kao, YH

Sasaki, Y

Liu, X

Furdyna, JK

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.1448658

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Grazing incidence x-ray scattering (GIXS) and x-ray diffraction (XRD) techniques have been employed to study the microscopic structure of magnetic digital layers of Mn/GaAs and MnGa/GaAs. Samples with various GaAs layer thickness (8 to 16 monolayers) and a half monolayer of either Mn or MnGa were prepared by low-temperature molecular-beam epitaxy. All digital alloys consist of 50 periods of magnetic layers separated by GaAs. High crystalline quality was verified and the periodicity and layer thickness were determined from the GIXS and XRD data. In order to investigate the magnetic properties, we performed magnetization measurements on all samples using superconducting quantum interference device magnetometry (SQUID). (C) 2002 American Institute of Physics.

引用

页码：1150 / 1152

页数：3

共 12 条

[1]

Cullity B. D., ELEMENTS XRAY DIFFRA

[2]

FURIS M, UNPUB

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