Local conduction band offset of GaSb self-assembled quantum dots on GaAs

被引：36

作者：

Rubin, ME

Blank, HR

Chin, MA

Kroemer, H

Narayanamurti, V

机构：

[1] Ctr. for Quantized Electron. Struct., University of California, Santa Barbara

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 12期

关键词：

D O I：

10.1063/1.118624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaSb self-assembled quantum dots grown by molecular beam epitaxy on GaAs exhibit a staggered (type II) band lineup with a potential barrier in the conduction band. Traditional methods cannot measure this local band offset because of the small (similar to 50 nm) lateral dot size. The nanometer resolution of ballistic electron emission microscopy is exploited To image individual dots and measure a local band offset of 0.08+/-0.02 eV. (C) 1997 American Institute of Physics.

引用

页码：1590 / 1592

页数：3