ZnSTeSe metal-semiconductor-metal photodetectors

被引:23
作者
Chang, SJ [1 ]
Su, YK
Chen, WR
Chen, JF
Lan, WH
Lin, WJ
Cherng, YT
Liu, CH
Liaw, UH
机构
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[3] Chung Shan Inst Sci & Technol, Taoyuan 325, Taiwan
[4] Nan Jeon Jr Coll Technol & Commerce, Dept Elect Engn, Yan Hsui 737, Taiwan
[5] Chin Min Coll, Dept Elect Engn, To Fen 351, Taiwan
关键词
double-crystal X-ray diffraction; molecular beam epitaxy; metal-semiconductor-metal photodetector; ZnSTeSe;
D O I
10.1109/68.980508
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS0.18Se0.82 layer was automatically formed in between the ZnSe buffer layer, and the ZnSo(0.17)Te(0.08)Se(0.75) epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photo current to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photo responsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region.
引用
收藏
页码:188 / 190
页数:3
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