Cryogenic processed metal-semiconductor-metal (MSM) photodetectors on MBE grown ZnSe

Molecular beam epitaxy grown 0.5-mu m and 2.0-mu m thick undoped ZnSe on semi-insulating (100) GaAs substrates were prepared for metal-semiconductor-metal (MSM) photodetector devices. The MSM photodetectors consisted of interdigitated metal fingers with 2, 3, and 4 mu m width/spacing on a wafer. A multilayer resist process was employed using polyimide and SiO2 thin films before the pattern generation to aid in a special low temperature (LT) lift-off process. Dark current-voltage (I-Sr), DC photo I-V, high-frequency I-V, spectral response, and frequency response techniques were employed for testing the device performance. The cryogenic processed metallization provided an improved interface between metal and semiconductor interface. The breakdown voltage in these devices is dependent on the electrode width/spacing and not on film thickness. Dark current remained at around 1 pA for a bias of +/-10 V, The devices exhibited a high spectral responsivity of 0.6 (A/W) at a wavelength of 460 nm at 5 V applied bias. A: maximum spectral responsivity of 1 (A/W) at an applied bias or 5 V was obtained in these devices indicating an internal gain mechanism. This internal gain mechanism is attributed to hole accumulation in ZnSe epilayers.