RECENT ADVANCES IN THE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF HGCDTE BY THE DIRECT ALLOY GROWTH-PROCESS

In the last few years, emphasis in the organometallic vapor phase epitaxy (OMVPE) of HgCdTe has been in the study of its suitability for device applications. This paper will review recent results in the growth of HgCdTe by the direct alloy growth (DAG) process and some of the latest device results. For a layer with a cutoff wavelength of 5.5-mu-m, the p-n junction R0A products as high as 1 x 10(6) OMEGA cm2 and metal-insulator-semiconductor (MIS) charge storage times as high as 250 ms were obtained. The issue of uniformity and reproducibility of the layers will also be addressed.