HIGHLY UNIFORM, LARGE-AREA HGCDTE LAYERS ON CDTE AND CDTESE SUBSTRATES

被引：14

作者：

BHAT, IB ^{[1
]}

FARDI, H ^{[1
]}

GHANDHI, SK ^{[1
]}

JOHNSON, CJ ^{[1
]}

机构：

[1] II-VI INC,SAXONBURG,PA 16056

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.575510

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2800 / 2803

页数：4

共 16 条

[1] IMPLEMENTATION OF A COMPUTER-CONTROLLED MOVPE SYSTEM TO GROW EPITAXIAL CMT [J].

BEVAN, MJ ;

WOODHOUSE, KT .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :254-261

[2] THE GROWTH OF MERCURY CADMIUM TELLURIDE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

BHAT, IB ;

GHANDHI, SK .

JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) :241-246

[3] MATERIAL CHARACTERISTICS OF HG1-XCDXTE GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

EDWALL, DD ;

GERTNER, ER ;

BUBULAC, LO .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :240-247

[4] INFRARED OPTICAL-ABSORPTION OF HG1-XCDXTE [J].

FINKMAN, E ;

NEMIROVSKY, Y .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4356-4361

[5] HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS [J].

GHANDHI, SK ;

BHAT, I .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :779-781

[6] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].

HANSEN, GL ;

SCHMIT, JL ;

CASSELMAN, TN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7099-7101

[7]

HIGA KT, 1987, II VI 87 MONT

[8] METALORGANIC GROWTH OF HIGH-PURITY HGCDTE FILMS [J].

HOKE, WE ;

LEMONIAS, PJ ;

TRACZEWSKI, R .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1092-1094

[9] LOW-TEMPERATURE METALORGANIC GROWTH OF CDTE AND HGTE FILMS USING DITERTIARYBUTYLTELLURIDE [J].

HOKE, WE ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1669-1671

[10] METALORGANIC GROWTH OF CDTE AND HGCDTE EPITAXIAL-FILMS AT A REDUCED SUBSTRATE-TEMPERATURE USING DIISOPROPYLTELLURIDE [J].

HOKE, WE ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :398-400

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