A COMPARISON OF HGCDTE METALORGANIC CHEMICAL VAPOR-DEPOSITION FILMS ON LATTICE MATCHED CDZNTE AND CDTESE SUBSTRATES

被引：14

作者：

BEVAN, MJ ^{[1
]}

DOYLE, NJ ^{[1
]}

GREGGI, J ^{[1
]}

SNYDER, D ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,DEPT CHEM ENGN,PITTSBURGH,PA 15213

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.576960

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Epitaxial layers of Hg1 -xCdxTe have been grown by metalorganic chemical vapor deposition (MOCVD) with the interdiffused multilayer process using diethyltelluride and diisopropyltelluride. Both double crystal x-ray diffraction and cross-sectional transmission electron microscopy have confirmed that the crystal quality is limited by that of the lattice matched substrates, CdZnTe and CdTeSe. The (100)-oriented epilayers are free of twinning and have the lowest values of rocking curve widths reported for MOCVD HgCdTe. Growth on (211)B CdZnTe has been explored to avoid both twinning and pyramidal defects in HgCdTe. © 1990, American Vacuum Society. All rights reserved.

引用

页码：1049 / 1053

页数：5

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