ELECTRICAL-PROPERTIES AND ANNEALING BEHAVIOR OF CDXHG1-XTE GROWN BY LPE AND MOVPE

被引:25
作者
CAPPER, P
EASTON, BC
WHIFFIN, PAC
MAXEY, CD
机构
关键词
D O I
10.1016/0022-0248(86)90484-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
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页码:508 / 514
页数:7
相关论文
共 28 条
[1]   ELECTRON-MOBILITY IN LPE HG1-XCDXTE/CDTE LAYERS NEAR ZERO BAND-GAP CROSSING [J].
BAJAJ, J ;
SHIN, SH ;
BOSTRUP, G ;
CHEUNG, DT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :244-246
[2]  
Baker I. M., 1983, Second International Conference on Advanced Infrared Detectors and Systems, P12
[3]  
BECK JD, 1985, Patent No. 4507160
[4]   IMPLEMENTATION OF A COMPUTER-CONTROLLED MOVPE SYSTEM TO GROW EPITAXIAL CMT [J].
BEVAN, MJ ;
WOODHOUSE, KT .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :254-261
[5]  
BOGOBOYASHCHII VV, 1985, SOV PHYS SEMICOND+, V19, P505
[6]   DIFFUSION OF GOLD AND MERCURY SELF-DIFFUSION IN N-TYPE BRIDGMAN-GROWN HG1-XCDXTE(X-CONGRUENT-TO-0.2) [J].
BROWN, M ;
WILLOUGHBY, AFW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1641-1645
[7]   DIFFUSION IN CDHG1-XTE AND RELATED MATERIALS [J].
BROWN, M ;
WILLOUGHBY, AFW .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :27-39
[8]   ACCEPTOR DOPING OF BRIDGMAN-GROWN CDXHG1-XTE [J].
CAPPER, P ;
GOSNEY, JJG ;
JONES, CL ;
KENWORTHY, I ;
ROBERTS, JA .
JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) :57-65
[9]   EFFECTS OF ANNEALING ON HG0.79CD0.21 TE EPILAYERS [J].
CHU, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5876-5879
[10]   MEASUREMENT OF IMPURITIES IN A MULTI-DOPED SAMPLE OF CADMIUM MERCURY TELLURIDE [J].
CLEGG, JB ;
MULLIN, JB ;
TIMMINS, KJ ;
BLACKMORE, GW ;
EVERETT, GL ;
SNOOK, R .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) :879-889