MEASUREMENT OF IMPURITIES IN A MULTI-DOPED SAMPLE OF CADMIUM MERCURY TELLURIDE

被引:14
作者
CLEGG, JB
MULLIN, JB
TIMMINS, KJ
BLACKMORE, GW
EVERETT, GL
SNOOK, R
机构
[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
[2] MAT QUAL ASSURANCE DIRECTORATE,LONDON SE18 6TD,ENGLAND
[3] ADMIRALTY MAT TECHNOL ESTAB,POOLE BH16 6JU,DORSET,ENGLAND
[4] JOHNSON & MATTHEY CHEM LTD,ROYSTON SG8 5HE,HERTS,ENGLAND
[5] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,LONDON SW7 2AY,ENGLAND
关键词
D O I
10.1007/BF02655300
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:879 / 889
页数:11
相关论文
共 10 条
[1]   CONCENTRATIONS OF CARBON AND OXYGEN IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE CRYSTALS GROWN BY LEC TECHNIQUE [J].
BLACKMORE, GW ;
CLEGG, JB ;
HISLOP, JS ;
MULLIN, JB .
JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) :401-413
[2]   CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].
BROZEL, MR ;
CLEGG, JB ;
NEWMAN, RC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339
[3]   IMPROVED SYSTEM FOR THE BRIDGMAN GROWTH OF CRYSTALS WITH TOXIC AND-OR HIGHLY VOLATILE COMPONENTS [J].
CAPPER, P ;
HARRIS, JE ;
NICHOLSON, D ;
COLE, D .
JOURNAL OF CRYSTAL GROWTH, 1979, 46 (04) :575-581
[4]   QUANTITATIVE MEASUREMENT OF IMPURITIES IN GALLIUM-ARSENIDE [J].
CLEGG, JB ;
GRAINGER, F ;
GALE, IG .
JOURNAL OF MATERIALS SCIENCE, 1980, 15 (03) :747-750
[5]  
COWEY K, 1978, MQAD819 TECHN PAP
[6]   DIRECT ANALYSIS OF SOLID CADMIUM MERCURY TELLURIDE BY FLAMELESS ATOMIC-ABSORPTION USING INTERACTIVE COMPUTER-PROCESSING [J].
GRAINGER, F ;
GALE, IG .
JOURNAL OF MATERIALS SCIENCE, 1979, 14 (06) :1370-1374
[7]   DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE [J].
JOHNSON, ES ;
SCHMIT, JL .
JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (01) :25-38
[8]  
KIRKBRIGHT GF, 1980, ANAL P, V17
[9]   IDENTIFICATION AND INVESTIGATION OF IMPURITIES IN UNDOPED HG1-XCDXTE [J].
LIN, JW .
JOURNAL OF SOLID STATE CHEMISTRY, 1975, 15 (01) :96-101
[10]   PROGRESS IN THE ANALYSIS OF CRYSTALLINE SOLIDS [J].
MILLETT, EJ .
JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) :666-682