HIGH-PERFORMANCE INP/GA0.47IN0.53AS/INP METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH A STRAINED AL0.1IN0.9P BARRIER ENHANCEMENT LAYER

被引：10

作者：

CHAN, PT ^{[1
]}

CHOY, HS ^{[1
]}

SHU, C ^{[1
]}

HSU, CC ^{[1
]}

机构：

[1] CHINESE UNIV HONG KONG,DEPT ELECTR ENGN,SHA TIN,HONG KONG

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 12期

关键词：

D O I：

10.1063/1.115026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A reduction in the dark current and an enhancement of the breakdown voltage have been observed in interdigitated InP/Ga0.47In0.53As/InP metal-semiconductor-metal photodetectors when a cap layer of Al0.1In0.9P was grown on the epitaxial structure to increase the Schottky barrier. The devices had a de responsivity of 0.32 A/W and an intrinsic response faster than 74 ps. (C) 1995 American Institute of Physics.

引用

页码：1715 / 1717

页数：3

共 12 条

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