METAL-SEMICONDUCTOR METAL PHOTODETECTOR USING FE-IMPLANTED IN0.53GA0.47AS

被引：7

作者：

RAO, MV ^{[1
]}

GULWADI, SM ^{[1
]}

HONG, WP ^{[1
]}

CANEAU, C ^{[1
]}

CHANG, GK ^{[1
]}

PAPANICOLAOU, N ^{[1
]}

机构：

[1] BELLCORE CORP,RED BANK,NJ 07701

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 01期

关键词：

PHOTODETECTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two finger interdigitated metal-semiconductor-metal detector has been made using high-resistance Fe-implanted In0.53Ga0.47As material grown on InP:Fe. The fingers are 30-mu-m long with 1-mu-m width and 1.5-mu-m separation. The breakdown voltage of the device is 5 V. At 2 V bias, the device has a dark current of 250 nA and a DC responsivity of 0.375 A/W at 1.3-mu-m. The full width at half maximum of the response of the detector at 1.3-mu-m is 260 ps.

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收藏

页码：46 / 47

页数：2

相关论文

共 10 条

[1]

CHANG GK, 1989, ELECTRON LETT, V25, P1021, DOI 10.1049/el:19890683

[2] RANGE STATISTICS AND RUTHERFORD BACKSCATTERING STUDIES ON FE-IMPLANTED IN0.53GA0.47AS [J].

GULWADI, SM ;

RAO, MV ;

SIMONS, DS ;

HOLLAND, OW ;

HONG, WP ;

CANEAU, C ;

DIETRICH, HB .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) :162-167

[3] 5.2-GHZ BANDWIDTH MONOLITHIC GAAS OPTOELECTRONIC RECEIVER [J].

HARDER, CS ;

VANZEGHBROECK, B ;

MEIER, H ;

PATRICK, W ;

VETTIGER, P .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :171-173

[4] HIGH-PERFORMANCE AL0.15GA0.85AS/IN0.53GA0.47AS MSM PHOTODETECTORS GROWN BY OMCVD [J].

HONG, WP ;

CHANG, GK ;

BHAT, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) :659-662

[5] IN0.53GA0.47AS METAL-SEMICONDUCTOR-METAL PHOTODETECTOR USING PROTON BOMBARDED P-TYPE MATERIAL [J].

RAO, MV ;

HONG, WP ;

CANEAU, C ;

CHANG, GK ;

PAPANICOLAOU, N ;

DIETRICH, HB .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :3943-3945

[6] THE DSI DIODE - A FAST LARGE-AREA OPTOELECTRONIC DETECTOR [J].

ROTH, W ;

SCHUMACHER, H ;

KLUGE, J ;

GEELEN, HJ ;

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1034-1036

[7] AN INVESTIGATION OF THE OPTOELECTRONIC RESPONSE OF GAAS/INGAAS MSM PHOTODETECTORS [J].

SCHUMACHER, H ;

LEBLANC, HP ;

SOOLE, J ;

BHAT, R .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) :607-609

[8]

Soole J. B. D., 1989, IEEE Photonics Technology Letters, V1, P250, DOI 10.1109/68.36058

[9] LATERAL HIGH-SPEED METAL-SEMICONDUCTOR METAL PHOTODIODES ON HIGH-RESISTIVITY INGAAS [J].

WEI, CJ ;

KUHL, D ;

BOTTCHER, EH ;

BIMBERG, D ;

KUPHAL, E .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (08) :334-335

[10] HIGH-PERFORMANCE OF FE-INP INGAAS METAL-SEMICONDUCTOR METAL PHOTODETECTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

YANG, L ;

SUDBO, AS ;

LOGAN, RA ;

TANBUNEK, T ;

TSANG, WT .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (01) :56-58