LATERAL HIGH-SPEED METAL-SEMICONDUCTOR METAL PHOTODIODES ON HIGH-RESISTIVITY INGAAS

被引：16

作者：

WEI, CJ ^{[1
]}

KUHL, D ^{[1
]}

BOTTCHER, EH ^{[1
]}

BIMBERG, D ^{[1
]}

KUPHAL, E ^{[1
]}

机构：

[1] DEUTSCH BUNDESPOST FERNMELDETECH ZENT AMT,FORSCHUNGSINST,W-6100 DARMSTADT,GERMANY

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 08期

关键词：

GalnAs; photodetectors; Schottky diodes; Semiconductor devices and materials;

D O I：

10.1109/55.57925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-semiconductor-metal (MSM) photodetectors on high-resistivity InGaAs with a lateral planar structure have been fabricated and characterized. The detectors formed exhibit a low capacitance (<50 fF), a very fast response (> 14 GHz), a dark current of about 250 nA at a bias voltage of 10 V, and an external quantum efficiency of 20% at 1.3 μm. © 1990 IEEE

引用

页码：334 / 335

页数：2

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