AN INVESTIGATION OF THE OPTOELECTRONIC RESPONSE OF GAAS/INGAAS MSM PHOTODETECTORS

被引：53

作者：

SCHUMACHER, H

LEBLANC, HP

SOOLE, J

BHAT, R

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：607 / 609

页数：3

共 12 条

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[8] THE DSI DIODE - A FAST LARGE-AREA OPTOELECTRONIC DETECTOR [J].

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[9] A LOW DARK CURRENT, LARGE BANDWIDTH MOTT-BARRIER PHOTODETECTOR FABRICATED BY QUASI-TERNARY GROWTH OF GAAS [J].

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