HIGH-PERFORMANCE OF FE-INP INGAAS METAL-SEMICONDUCTOR METAL PHOTODETECTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：37

作者：

YANG, L ^{[1
]}

SUDBO, AS ^{[1
]}

LOGAN, RA ^{[1
]}

TANBUNEK, T ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] NORWEGIAN TELECOMMUN ADM,DEPT RES,KJELLER,NORWAY

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 01期

关键词：

D O I：

10.1109/68.47042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaAs metal/semiconductor/metal (MSM) photodetector with Fe-doped InP Schottky barrier enhancement layer is described. With S V bias the detector has negligible low-frequency gain, a low dark current of 200 nA, a responsivity of 0.3 AAV, and an impulse response with a 1/e fall time of 65 ps, corresponding to a 3 dB bandwidth of 2.5 GHz. The device layer structure is a very attractive candidate for integration with high-performance InGaAs/InP FET's. © 1990 IEEE

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页码：56 / 58

页数：3

相关论文

共 11 条

[1] HIGH-SPEED GA0.47IN0.53AS MISIM PHOTODETECTORS WITH DIELECTRIC-ASSISTED SCHOTTKY BARRIERS [J].

CHAN, WK ;

CHANG, GK ;

BHAT, R ;

SCHLOTTER, NE ;

NGUYEN, CK .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (09) :417-419

[2] HIGH-PERFORMANCE AL0.15GA0.85AS/IN0.53GA0.47AS MSM PHOTODETECTORS GROWN BY OMCVD [J].

HONG, WP ;

CHANG, GK ;

BHAT, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) :659-662

[3] GA0.47IN0.53AS METAL-SEMICONDUCTOR-METAL PHOTODIODES USING A LATTICE MISMATCHED AL0.4GA0.6AS SCHOTTKY ASSIST LAYER [J].

KIKUCHI, T ;

OHNO, H ;

HASEGAWA, H .

ELECTRONICS LETTERS, 1988, 24 (19) :1208-1210

[4] DOPING OF INP AND GAINAS WITH S DURING METALORGANIC VAPOR-PHASE EPITAXY [J].

LOGAN, RA ;

TANBUNEK, T ;

SERGENT, AM .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) :3723-3725

[5] A STUDY OF FE-DOPANTS FOR GROWTH OF SEMIINSULATING INP BY MOCVD [J].

LONG, JA ;

RIGGS, VG ;

MACRANDER, AT ;

JOHNSTON, WD .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :42-46

[6] HIGH-PERFORMANCE GAINAS INTERDIGITATED-METAL-SEMICONDUCTOR-METAL (IMSM) 1.3-MU-M PHOTODETECTOR GROWN ON A GAAS SUBSTRATE [J].

ROGERS, DL ;

WOODALL, JM ;

PETTIT, GD ;

MCINTURFF, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2383-2384

[7] AN INVESTIGATION OF THE OPTOELECTRONIC RESPONSE OF GAAS/INGAAS MSM PHOTODETECTORS [J].

SCHUMACHER, H ;

LEBLANC, HP ;

SOOLE, J ;

BHAT, R .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) :607-609

[8]

Soole J. B. D., 1989, IEEE Photonics Technology Letters, V1, P250, DOI 10.1109/68.36058

[9]

WADA O, 1989, APPL PHYS LETT, V1

[10] MONOLITHICALLY INTEGRATED INGAAS/INP MSM-FET PHOTORECEIVER PREPARED BY CHEMICAL BEAM EPITAXY [J].

YANG, L ;

SUDBO, AS ;

TSANG, WT ;

GARBINSKI, PA ;

CAMARDA, RM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (01) :59-62