MONOLITHICALLY INTEGRATED INGAAS/INP MSM-FET PHOTORECEIVER PREPARED BY CHEMICAL BEAM EPITAXY

We demonstrate the first monolithic integration of a metal-semiconductor-metal (MSM) InGaAs photodetector with an FET and resistors into a high-impedance front-end photoreceiver circuit. The sample was grown in a single step by chemical beam epitaxy, and standard processing steps for making FET’s were used to fabricate the receiver circuit. Semi-insulating Fe-doped InP layers were used as the insulating gate of the FET, the barrier enhancement layer in the MSM photodetector, and the electrical isolation layer between the photodetector and the electronic circuit. A bit error rate of less than 10-9 at 200 Mbits/s has been achieved with this preliminary circuit for au optical power of -17 dBm. © 1990 IEEE