HIGH-SPEED GA0.47IN0.53AS MISIM PHOTODETECTORS WITH DIELECTRIC-ASSISTED SCHOTTKY BARRIERS

被引：22

作者：

CHAN, WK

CHANG, GK

BHAT, R

SCHLOTTER, NE

NGUYEN, CK

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 09期

关键词：

D O I：

10.1109/55.34728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：417 / 419

页数：3

共 9 条

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[9] VERY HIGH-SPEED GAINAS METAL-SEMICONDUCTOR-METAL PHOTODIODE INCORPORATING AN ALLNAS/GALNAS GRADED SUPERLATTICE [J].

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