LANGMUIR-BLODGETT DEPOSITED CADMIUM GATE INVERTED INP-GAINAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：7

作者：

CHAN, WK

COX, HM

ABELES, JH

KELTY, SP

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 25期

关键词：

D O I：

10.1049/el:19870930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1346 / 1348

页数：3

共 12 条

[1] COMPARISON OF THE SATURATED CURRENT IN NORMAL AND INVERTED MODULATION-DOPED IN0.53GA0.47AS/INP STRUCTURES [J].

CHAN, WK ;

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DAVISSON, PS ;

LEHENY, RF .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) :247-249

[2] JUNCTION FIELD-EFFECT TRANSISTORS USING IN0.53GA0.47AS MATERIAL GROWN BY MOLECULAR-BEAM EPITAXY [J].

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COX, HM ;

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GARDNER, PD ;

LIU, SG ;

NARAYAN, SY ;

COLVIN, SD ;

PACZKOWSKI, JP ;

CAPEWELL, DR .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :363-364

[5]

HIROSE K, 1985, P INT S GAAS RELATED, P529

[6] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[7] INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH MERCURY AND CADMIUM GATES [J].

MEINERS, LG ;

CLAWSON, AR ;

NGUYEN, R .

APPLIED PHYSICS LETTERS, 1986, 49 (06) :340-341

[8] MICROWAVE PERFORMANCE OF INALAS/INGAAS/INP MODFETS [J].

PENG, CK ;

AKSUN, MI ;

KETTERSON, AA ;

MORKOC, H ;

GLEASON, KR .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) :24-26

[9] AN APPLIED SCIENCE PERSPECTIVE OF LANGMUIR-BLODGETT FILMS [J].

ROBERTS, GG .

ADVANCES IN PHYSICS, 1985, 34 (04) :475-512

[10] SCHOTTKY-BARRIER HEIGHTS OF HG, CD, AND ZN ON NORMAL-TYPE INP(100) [J].

SA, CJ ;

MEINERS, LG .

APPLIED PHYSICS LETTERS, 1986, 48 (26) :1796-1798

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