VAPOR LEVITATION EPITAXY - SYSTEM-DESIGN AND PERFORMANCE

[1] BEUCHET G, 1981, I PHYS C SER, V56, P37

[2] PSEUDO-QUATERNARY GAINASP SEMICONDUCTORS - A NEW GA0.47IN0.53AS/INP GRADED GAP SUPERLATTICE AND ITS APPLICATIONS TO AVALANCHE PHOTODIODES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1193 - 1195

[3] HIGH-SENSITIVITY GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS PREPARED BY VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1142 - 1144

[4] VAPOR LEVITATION EPITAXY - A NEW CONCEPT IN EPITAXIAL CRYSTAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 641 - 643

[5] VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY INGAAS, INP AND INGAAS/INP MULTILAYER STRUCTURES [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) : 523 - 528

[6] TWO-DIMENSIONAL ELECTRON-GAS AT INTERFACE OF A SELECTIVELY DOPED INGAP/GAAS HETEROSTRUCTURE [J]. ELECTRONICS LETTERS, 1986, 22 (02) : 73 - 74

[7] COX HM, 1983, I PHYS C SER, V65, P133

[8] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +

[9] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1020 - &

[10] FAIRMAN RD, 1977, I PHYS C SERIES B, V33, P45

[1] BEUCHET G, 1981, I PHYS C SER, V56, P37

[2] PSEUDO-QUATERNARY GAINASP SEMICONDUCTORS - A NEW GA0.47IN0.53AS/INP GRADED GAP SUPERLATTICE AND ITS APPLICATIONS TO AVALANCHE PHOTODIODES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1193 - 1195

[3] HIGH-SENSITIVITY GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS PREPARED BY VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1142 - 1144

[4] VAPOR LEVITATION EPITAXY - A NEW CONCEPT IN EPITAXIAL CRYSTAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 641 - 643

[5] VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY INGAAS, INP AND INGAAS/INP MULTILAYER STRUCTURES [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) : 523 - 528

[6] TWO-DIMENSIONAL ELECTRON-GAS AT INTERFACE OF A SELECTIVELY DOPED INGAP/GAAS HETEROSTRUCTURE [J]. ELECTRONICS LETTERS, 1986, 22 (02) : 73 - 74

[7] COX HM, 1983, I PHYS C SER, V65, P133

[8] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +

[9] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1020 - &

[10] FAIRMAN RD, 1977, I PHYS C SERIES B, V33, P45