VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY INGAAS, INP AND INGAAS/INP MULTILAYER STRUCTURES

被引：21

作者：

COX, HM ^{[1
]}

KOZA, MA ^{[1
]}

KERAMIDAS, VG ^{[1
]}

YOUNG, MS ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 73卷 / 03期

关键词：

D O I：

10.1016/0022-0248(85)90016-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：523 / 528

页数：6

相关论文

共 22 条

[1] EFFECT OF BAKING TEMPERATURE ON PURITY OF LPE GA0.47IN0.53AS
AMANO, T
TAKAHEI, K
NAGAI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : 2105 - 2109
[2] THERMAL-EXPANSION PARAMETERS OF SOME GAXIN1-XASYP1-X ALLOYS
BISARO, R
MERENDA, P
PEARSALL, TP
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 100 - 102
[3] BROWN MG, 1984, DEC IEEE INT EL DEV
[4] HIGH-SENSITIVITY GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS PREPARED BY VAPOR-PHASE EPITAXY
CHEN, CY
KASPER, BL
COX, HM
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1142 - 1144
[5] EFFECT OF IN SITU ETCHING AND SUBSTRATE MISORIENTATION ON THE MORPHOLOGY OF VPE INP LAYERS
CHEVRIER, J
HUBER, AM
LINH, NT
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) : 369 - 371
[6] COX HM, 1983, I PHYS C SER, V65, P133
[7] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
DILORENZO, JV
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +
[8] FAIRMAN RD, 1977, I PHYS C SERIES B, V33, P45
[9] LOW DARK-CURRENT, HIGH-EFFICIENCY PLANAR IN0.53 GA0.47 AS-INP P-I-N PHOTO-DIODES
FORREST, SR
CAMLIBEL, I
KIM, OK
STOCKER, HJ
ZUBER, JR
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (11): : 283 - 285
[10] A SEMIAUTOMATIC DATA COLLECTION SYSTEM SUITABLE FOR INFRARED REFLECTIVITY MEASUREMENTS
HAMMER, R
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1969, 40 (10) : 1330 - &