IN0.53GA0.47AS METAL-SEMICONDUCTOR-METAL PHOTODETECTOR USING PROTON BOMBARDED P-TYPE MATERIAL

Metal-semiconductor-metal (MSM) photodetectors have been fabricated using as-grown and proton-bombarded p-type In0.53Ga0.47As. Proton bombardment caused a decrease in the dark current, an increase in the breakdown voltage, and an improvement in the speed of the MSM detector. The dark current of the MSM detector with 3 x 10(15) cm-3 proton bombardment is 10 nA at 2 V and 300 nA at 5-V bias. The dc responsivity is 0.7 A/W and impulse response full width at half maximum is 160 ps for 1.3-mu-m radiation at 5 V bias.