LIGHT-ION-BOMBARDED P-TYPE IN0.53GA0.47AS

被引：17

作者：

RAO, MV ^{[1
]}

BABU, RS ^{[1
]}

DIETRICH, HB ^{[1
]}

THOMPSON, PE ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4755 / 4759

页数：5

共 21 条

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :750-755

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IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) :29-31

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