OPTIMUM PROTON ENERGY FOR DH LASERS DETERMINED BY INSITU MONITORING DURING BOMBARDMENT

被引：13

作者：

DYMENT, JC

SMITH, G

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 05期

关键词：

D O I：

10.1109/JQE.1981.1071183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：750 / 755

页数：6

共 7 条

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[2] OPTICAL AND ELECTRICAL PROPERTIES OF PROTON-BOMBARDED P-TYPE GAAS [J].

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[6] LOW THRESHOLD CURRENT PROTON-ISOLATED (GAAL)AS DOUBLE HETEROSTRUCTURE LASERS [J].

STEVENTON, AG ;

FIDDYMENT, PJ ;

NEWMAN, DH .

OPTICAL AND QUANTUM ELECTRONICS, 1977, 9 (06) :519-525

[7] NEW STRIPE GEOMETRY LASER WITH HIGH-QUALITY LASING CHARACTERISTICS BY HORIZONTAL TRANSVERSE MODE STABILIZATION - REFRACTIVE-INDEX GUIDING WITH ZN DOPING [J].

YONEZU, H ;

MATSUMOTO, Y ;

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HAYASHI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) :209-210

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