RANGE OF PROTONS IN GAAS

被引：5

作者：

MATSUMURA, H

NAGATOMO, M

FURUKAWA, S

STEPHENS, KG

机构：

[1] TOKYO INST TECHNOL,DEPT APPL ELECTR,MIDORI KU,YOKOHAMA 227,JAPAN

[2] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1977年 / 33卷 / 02期

关键词：

D O I：

10.1080/00337577708237479

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：121 / 123

页数：3

共 15 条

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[2]

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[3]

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[5] BRAGGS RULE STUDY IN BINARY METAL-ALLOYS AND METAL-OXIDES FOR MEV HE-4+ IONS [J].

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CHU, WK ;

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[6] BACKSCATTERING STUDY ON LATERAL SPREAD OF IMPLANTED IONS [J].

FURUKAWA, S ;

MATSUMURA, H .

APPLIED PHYSICS LETTERS, 1973, 22 (03) :97-98

[7] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J].

FURUKAWA, S ;

ISHIWARA, H ;

MATSUMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) :134-+

[8]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[9]

MCINTYRE NS, COMMUNICATION

[10]

Northcliffe L. S., 1970, NUCL DATA A, V7, P233

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