LOW THRESHOLD CURRENT PROTON-ISOLATED (GAAL)AS DOUBLE HETEROSTRUCTURE LASERS

被引：19

作者：

STEVENTON, AG ^{[1
]}

FIDDYMENT, PJ ^{[1
]}

NEWMAN, DH ^{[1
]}

机构：

[1] POST OFF RES CTR,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1977年 / 9卷 / 06期

关键词：

D O I：

10.1007/BF01208762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：519 / 525

页数：7

相关论文

共 18 条

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[6] CARRIER REMOVAL AFTER H1+, H2+ OR H3+ IMPLANTS INTO GAAS
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[7] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS
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[8] STRIPED GAAS LASERS - MODE SIZE AND EFFICIENCY
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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2723 - 2730
[9] THERMAL RESISTANCE OF HETEROSTRUCTURE LASERS
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[10] KIRKBY P, TO BE PUBLISHED