INCREMENTAL EFFICIENCY ENHANCEMENT AND RF RESPONSE OF GAAS-GAALAS DOUBLE-HETEROSTRUCTURE STRIPE LASERS

被引：5

作者：

CARROLL, JE

ELDON, SG

THOMPSON, GHB

机构：

[1] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE,ENGLAND

[2] STANDARD TELECOMMUN LABS LTD,HARLOW,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1976年 / 12卷 / 21期

关键词：

D O I：

10.1049/el:19760429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：564 / 565

页数：2

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[3] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS
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[4] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN
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[5] Thompson G. H. B., 1972, Opto-Electronics, V4, P257, DOI 10.1007/BF02334396