RESISTIVITY INCREASE IN MBE GA0.47IN0.53AS FOLLOWING ION-BOMBARDMENT

被引：6

作者：

BARNARD, J ^{[1
]}

WOOD, CEC ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV, NATL RES & RESOURCE FACIL SUBMICRON STRUCT, ITHACA, NY 14853 USA

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 08期

关键词：

D O I：

10.1109/EDL.1981.25398

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：193 / 195

页数：3

共 8 条

[1] INTEGRATED DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS PHOTORECEIVER WITH AUTOMATIC GAIN-CONTROL [J].

BARNARD, J ;

OHNO, H ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1981, 2 (01) :7-9

[2] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS WITH SUB-MICRON GATES [J].

BARNARD, J ;

OHNO, H ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :174-176

[3] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRONICS LETTERS, 1980, 16 (10) :353-355

[4] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :110-111

[5] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE [J].

OHNO, H ;

BARNARD, J ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :154-155

[6]

OHNO H, 1980, FEB WOCSEMMAD SAN FR

[7] HYDROGEN-ION BOMBARDMENT OF GAAS [J].

STEEPLES, K ;

DEARNALEY, G ;

STONEHAM, AM .

APPLIED PHYSICS LETTERS, 1980, 36 (12) :981-983

[8] INVERSION-MODE INSULATED GATE GA0.47IN0.53AS FIELD-EFFECT TRANSISTORS [J].

WIEDER, HH ;

CLAWSON, AR ;

ELDER, DI ;

COLLINS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (03) :73-74

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