RANGE STATISTICS AND RUTHERFORD BACKSCATTERING STUDIES ON FE-IMPLANTED IN0.53GA0.47AS

被引：9

作者：

GULWADI, SM

RAO, MV

SIMONS, DS

HOLLAND, OW

HONG, WP

CANEAU, C

DIETRICH, HB

机构：

[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899

[2] OAK RIDGE NATL LAB,OAK RIDGE,TN 37831

[3] BELLCORE,RED BANK,NJ 07701

[4] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 01期

关键词：

D O I：

10.1063/1.347738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-energy Fe implantation at energies in the range 50 keV-2MeV to achieve a peak Fe concentration of 1-2x10(18) cm-3 is performed into undoped (n-type) InGaAs layers grown on InP:Fe. The first four statistical moments of the Fe profiles measured by secondary-ion mass spectrometry are determined. The Pearson IV distribution calculated from these moments matches the implant-profile closely. Samples implanted with Fe to doses in the range 5x10(12)-2x10(15) cm-2 at 380 keV are analyzed by Rutherford backscattering measurements to study ion-induced damage. For 380-keV implants, amorphization begins at a dose of almost-equal-to 3 x 10(13)cm-2.

引用

页码：162 / 167

页数：6

共 25 条

[1] ION-IMPLANTATION INTO GALLIUM-ARSENIDE [J].