HIGH-RESISTIVITY INGAAS(FE) GROWN BY A LIQUID-PHASE EPITAXIAL SUBSTRATE-TRANSFER TECHNIQUE

被引:11
作者
GROVES, SH
DIADIUK, V
PLONKO, MC
HOVEY, DL
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D O I
10.1063/1.95803
中图分类号
O59 [应用物理学];
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页码:78 / 80
页数:3
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共 9 条
  • [1] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH
    ANTYPAS, GA
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 64 - 65
  • [2] LOW-NOISE GA0.47IN0.53 AS PHOTOCONDUCTIVE DETECTORS USING FE COMPENSATION
    CHEN, CY
    CHI, GC
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1083 - 1085
  • [3] SEMI-INSULATING IN0.53GA0.47AS BY FE DOPING
    CLAWSON, AR
    MULLIN, DP
    ELDER, DI
    WIEDER, HH
    [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 90 - 95
  • [4] DIADIUK V, 1985, APPL PHYS LETT, V46
  • [5] LPE GROWTH AND CHARACTERIZATION OF INP PHOTODIODES
    GROVES, SH
    PLONKO, MC
    ARMIENTO, CA
    DIADIUK, V
    [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 83 - 89
  • [6] LONG JA, UNPUB J CRYST GROWTH
  • [7] PUTLEY EH, 1960, HALL EFFECT RELATED, P115
  • [8] ACCUMULATION MODE GA0.47IN0.53AS INSULATED GATE FIELD-EFFECT TRANSISTORS
    WIEDER, HH
    VETERAN, JL
    CLAWSON, AR
    MULLIN, DP
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 287 - 289
  • [9] 1983, ADA140027, P14