LPE GROWTH AND CHARACTERIZATION OF INP PHOTODIODES

被引:1
作者
GROVES, SH
PLONKO, MC
ARMIENTO, CA
DIADIUK, V
机构
关键词
D O I
10.1016/0022-0248(83)90252-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:83 / 89
页数:7
相关论文
共 19 条
[1]   PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J].
ANTYPAS, GA .
APPLIED PHYSICS LETTERS, 1980, 37 (01) :64-65
[2]   IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP [J].
ARMIENTO, CA ;
GROVES, SH ;
HURWITZ, CE .
APPLIED PHYSICS LETTERS, 1979, 35 (04) :333-335
[3]   IMPACT IONIZATION IN (100)-ORIENTED, (110)-ORIENTED, AND (111)-ORIENTED INP AVALANCHE PHOTO-DIODES [J].
ARMIENTO, CA ;
GROVES, SH .
APPLIED PHYSICS LETTERS, 1983, 43 (02) :198-200
[4]   THE DETECTION AND PREVENTION OF SULFUR CONTAMINATION IN THE LPE GROWTH OF INDIUM-PHOSPHIDE [J].
AYLETT, MR ;
HAIGH, J .
JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :127-132
[5]   EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].
CASEY, HC ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249
[6]   ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS [J].
COOK, LW ;
BULMAN, GE ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1982, 40 (07) :589-591
[7]   AVALANCHE MULTIPLICATION AND NOISE CHARACTERISTICS OF LOW-DARK-CURRENT GAINASP-INP AVALANCHE PHOTODETECTORS [J].
DIADIUK, V ;
GROVES, SH ;
HURWITZ, CE .
APPLIED PHYSICS LETTERS, 1980, 37 (09) :807-810
[8]   DIFFUSION LENGTH OF MOLES IN N-INP [J].
DIADIUK, V ;
GROVES, SH ;
ARMIENTO, CA ;
HURWITZ, CE .
APPLIED PHYSICS LETTERS, 1983, 42 (10) :892-894
[9]   LIQUID-PHASE EPITAXIAL-GROWTH OF INP AND INGAASP ALLOYS [J].
GROVES, SH ;
PLONKO, MC .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :81-87
[10]   GROWTH OF INP BY INFINITE SOLUTION LPE [J].
HOLMES, DE ;
KAMATH, GS .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :51-58