ACCUMULATION MODE GA0.47IN0.53AS INSULATED GATE FIELD-EFFECT TRANSISTORS

被引：19

作者：

WIEDER, HH ^{[1
]}

VETERAN, JL ^{[1
]}

CLAWSON, AR ^{[1
]}

MULLIN, DP ^{[1
]}

机构：

[1] USN, CTR OCEAN SYST, DIV ELECTR MAT SCI, SAN DIEGO, CA 92152 USA

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.94329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：287 / 289

页数：3

共 24 条

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[10]

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