INGAAS ENHANCEMENT-MODE MISFETS USING DOUBLE-LAYER GATE INSULATOR

被引：9

作者：

ISHII, K

SAWADA, T

OHNO, H

HASEGAWA, H

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 24期

关键词：

D O I：

10.1049/el:19820708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1034 / 1036

页数：3

共 10 条

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[2] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

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SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[3]

KAUMANNS R, 1981, P INT S GAAS RELATED, P329

[4] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :110-111

[5] IN0.53GA0.47AS N-CHANNEL NATIVE OXIDE INVERSION MODE FIELD-EFFECT TRANSISTOR [J].

LIAO, ASH ;

TELL, B ;

LEHENY, RF ;

CHANG, TY .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :280-282

[6] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :242-244

[7] IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES [J].

OCONNOR, P ;

PEARSALL, TP ;

CHENG, KY ;

CHO, AY ;

HWANG, JCM ;

ALAVI, K .

ELECTRON DEVICE LETTERS, 1982, 3 (03) :64-66

[8] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE [J].

OHNO, H ;

BARNARD, J ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :154-155

[9] INP HIGH MOBILITY ENHANCEMENT MISFETS USING ANODICALLY GROWN DOUBLE-LAYER GATE INSULATOR [J].

SAWADA, T ;

HASEGAWA, H .

ELECTRONICS LETTERS, 1982, 18 (17) :742-743

[10] INVERSION-MODE INSULATED GATE GA0.47IN0.53AS FIELD-EFFECT TRANSISTORS [J].

WIEDER, HH ;

CLAWSON, AR ;

ELDER, DI ;

COLLINS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (03) :73-74

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