共 20 条
- [2] GARDNER PD, 1981, RCA REV, V42, P542
- [4] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459
- [5] KAUMANS K, 1982, I PHYS C SER, V63, P329
- [6] HIGH-RESISTIVITY LPE LAYERS OF GAAS BY IRON DOPING [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02): : 673 - 679
- [7] LPE GROWTH OF HIGH-PURITY INP AND IN1-XGAXP1-YASY [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) : 133 - 142
- [9] GROWTH AND PROPERTIES OF SEMI-INSULATING EPITAXIAL GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (04): : 869 - 875