HIGH-RESISTIVITY LPE LAYERS OF GAAS BY IRON DOPING

被引：7

作者：

KOJIMA, K

HASEGAWA, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 62卷 / 02期

关键词：

D O I：

10.1002/pssa.2210620240

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：673 / 679

页数：7

相关论文

共 13 条

[1] ACTIVATION ENERGIES OF CHROMIUM IRON AND NICKEL IN GALLIUM ARSENIDE
ALLEN, GA
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (05) : 593 - +
[2] CHROMIUM-DOPED GALLIUM ARSENIDE OBTAINED BY LIQUID PHASE EPITAXY
ANDRE, E
LEDUC, JM
[J]. MATERIALS RESEARCH BULLETIN, 1969, 4 (03) : 149 - &
[3] ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE
BLANC, J
WEISBERG, LR
[J]. NATURE, 1961, 192 (479) : 155 - &
[4] IRON-DOPED LIQUID-PHASE-EPITAXIAL GAAS LAYERS WITH NEGATIVE-RESISTANCE PROPERTIES
HASEGAWA, H
KOJIMA, K
SAKAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) : 1251 - 1253
[5] GROWTH OF SEMI-INSULATING LPE GAAS FOR FET BUFFER LAYERS
HOUNG, YM
PEARSON, GL
MATTES, BL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) : 2058 - 2061
[6] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY
LANG, DV
LOGAN, RA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066
[7] Lebedev A. A., 1976, Soviet Physics - Semiconductors, V10, P1029
[8] MIXED CONDUCTION IN CR-DOPED GAAS
LOOK, DC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (12) : 1311 - 1315
[9] MILNES AG, 1973, DEEP LEVELS SEMICOND, P61
[10] HOLE TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
MITONNEAU, A
MARTIN, GM
MIRCEA, A
[J]. ELECTRONICS LETTERS, 1977, 13 (22) : 666 - 668