LPE GROWTH OF HIGH-PURITY INP AND IN1-XGAXP1-YASY

被引:44
作者
KUPHAL, E
POCKER, A
机构
关键词
D O I
10.1016/0022-0248(82)90220-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:133 / 142
页数:10
相关论文
共 27 条
[1]  
ADAMS AR, 1980, ELECTRON LETT, V16, P562
[2]   INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS [J].
BAUMANN, GG ;
BENZ, KW ;
PILKUHN, MH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) :1232-1235
[3]   EFFECTIVE DISTRIBUTION COEFFICIENTS OF SOME GROUP-VI ELEMENTS IN INDIUM-PHOSPHIDE GROWN BY LIQUID-PHASE EPITAXY [J].
BROWN, KE .
SOLID-STATE ELECTRONICS, 1974, 17 (05) :505-507
[4]  
BURKHARD H, 1981, I PHYS C SER, V56, P659
[5]   PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN NORMAL-TYPE INP [J].
CHIAO, SH ;
ANTYPAS, GA .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :466-468
[6]   THE GROWTH AND PERFECTION OF SINGLE-CRYSTAL INDIUM-PHOSPHIDE PRODUCED BY THE LEC TECHNIQUE [J].
COCKAYNE, B ;
BROWN, GT ;
MACEWAN, WR .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :9-15
[7]  
COOK LW, 1981, I PHYS C SER, V56, P361
[8]   BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS [J].
GREENE, PD ;
WHEELER, SA ;
ADAMS, AR ;
ELSABBAHY, AN ;
AHMAD, CN .
APPLIED PHYSICS LETTERS, 1979, 35 (01) :78-80
[9]  
GROVES SH, 1979, I PHYS C SER, V45, P71
[10]   GROWTH OF INP BY INFINITE SOLUTION LPE [J].
HOLMES, DE ;
KAMATH, GS .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :51-58