LPE GROWTH OF HIGH-PURITY INP AND IN1-XGAXP1-YASY

被引：44

作者：

KUPHAL, E

POCKER, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 58卷 / 01期

关键词：

D O I：

10.1016/0022-0248(82)90220-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：133 / 142

页数：10

共 27 条

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[14]

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[17] ALLOY SCATTERING AND HIGH-FIELD TRANSPORT IN TERNARY AND QUATERNARY 3-5 SEMICONDUCTORS [J].

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[18]

MARSH JH, 1981, I PHYS C SER, V56, P621

[19]

NICKEL H, 1981, PHYS STATUS SOLIDI A, V65, P583, DOI 10.1002/pssa.2210650222

[20] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP [J].

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JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) :693-712

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