DUAL IMPLANTS IN INGAAS

被引：5

作者：

RAO, MV ^{[1
]}

MOORE, F ^{[1
]}

DIETRICH, HB ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期

关键词：

D O I：

10.1063/1.346298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

P/Be and Ar/Be dual implantations were performed into In 0.53Ga0.47As. Significantly higher Be dopant activation was obtained for P/Be dual implantation compared to Be implantation. Lower dopant activation was obtained for Ar/Be dual implantation. Be in-diffusion during annealing is reduced for both P/Be and Ar/Be dual implantations.

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页码：3763 / 3765

页数：3

相关论文

共 7 条

[1] DUAL-SPECIES ION-IMPLANTATION IN ALXGA1-XAS [J].

ADACHI, S ;

YAMAHATA, S .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) :3312-3314

[2] SIMULATION OF ANOMALOUS ACCEPTOR DIFFUSION IN COMPOUND SEMICONDUCTORS [J].

FARLEY, CW ;

STREETMAN, BG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) :453-458

[3] SI-IMPLANTATIONS AND BE-IMPLANTATIONS IN INP-FE ACTIVATED BY HALOGEN LAMP RAPID THERMAL ANNEALING [J].

RAO, MV ;

KEATING, MP ;

THOMPSON, PE .

JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) :315-320

[4] HALOGEN LAMP RAPID THERMAL ANNEALING OF SI-IMPLANTED AND BE-IMPLANTED IN 0.53GA0.47AS [J].

RAO, MV ;

GULWADI, SM ;

THOMPSON, PE ;

FATHIMULLA, A ;

AINA, OA .

JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (02) :131-136

[5] BE+/P+, BE+/AR+, AND BE+/N+ COIMPLANTATIONS INTO INP-FE [J].

RAO, MV ;

NADELLA, RK .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) :1761-1766

[6] FORMATION OF A SHALLOW P+ LAYER ON INP USING A P/BE COIMPLANT [J].

WANG, KW .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2127-2129

[7] SHALLOW P+ LAYER IN IN0.53GA0.47AS USING P/BE AND AS/BE CO-IMPLANT [J].

WANG, KW ;

LONG, J ;

MITCHAM, D .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4455-4459