BE+/P+, BE+/AR+, AND BE+/N+ COIMPLANTATIONS INTO INP-FE

被引:35
作者
RAO, MV
NADELLA, RK
机构
[1] Department of Electrical and Computer Engineering, George Mason University, Fairfax
关键词
D O I
10.1063/1.345601
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single- and multiple-energy Be+/P+, Be +/Ar+, and Be+/N+ coimplantations were performed into semi-insulating InP:Fe. Significantly higher Be dopant activations were obtained for Be+/P+ and Be +/Ar+ coimplantations compared to Be+ implantation. Sharp hole-concentration depth profiles were obtained for Be +/P+ and Be+/Ar+ coimplantations in contrast to the deep diffusion fronts for Be+ implantation. A high degree of crystalline lattice damage in coimplanted material is believed to be responsible for the improved electrical characteristics of the material. A poor Be dopant electrical activation was observed for Be+/N+ coimplantation.
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页码:1761 / 1766
页数:6
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