DUAL IMPLANTATION OF BE+ AND F+ IN GAAS AND ALXGA1-XAS

被引：18

作者：

ADACHI, S

机构：

来源：

关键词：

D O I：

10.1063/1.98719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1161 / 1163

页数：3

共 6 条

[1]

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[2]

Heckingbottom R., 1973, RADIAT EFF, V17, P31

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MORIZUKA, K ;

NOZU, T ;

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AZUMA, M .

[5] RAPID THERMAL ANNEALING OF MG+ + AS+ DUAL IMPLANTS IN GAAS [J].

PATEL, KK ;

SEALY, BJ .

STONEHAM, EB ;

PATTERSON, GA ;

GLADSTONE, JM .