FORMATION OF HEAVILY DOPED N-TYPE LAYERS IN GAAS BY MULTIPLE ION-IMPLANTATION

被引：10

作者：

STONEHAM, EB

PATTERSON, GA

GLADSTONE, JM

机构：

来源：

关键词：

D O I：

10.1007/BF02670855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：371 / 383

页数：13

共 8 条

[1]

Heckingbottom R., 1973, RADIAT EFF, V17, P31

[2] ARSENIC AND CADMIUM IMPLANTATIONS INTO N-TYPE GALLIUM ARSENIDE [J].

ITOH, T ;

KUSHIRO, Y .

[3] GA(ASP) LIGHT-EMITTING DIODE FORMED BY ION-IMPLANTATION [J].

ITOH, T ;

OANA, Y .

[4]

ITOH T, 1971, 2 INT C ION IMPL SEM, P168

[5]

LIDOW A, 1977, THESIS STANFORD U

STONEHAM, EB ;

GIBBONS, JF .

[7]

STONEHAM EB, 1975, THESIS STANFORD U

WOODCOCK, JM .