DUAL-SPECIES ION-IMPLANTATION IN ALXGA1-XAS

被引：11

作者：

ADACHI, S ^{[1
]}

YAMAHATA, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3312 / 3314

页数：3

共 13 条

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[3] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J].

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FOY, PW .

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[4] MEASUREMENT OF MIS CAPACITORS WITH OXYGEN-DOPED ALXGA1-XAS INSULATING LAYERS ON GAAS [J].

CASEY, HC ;

CHO, AY ;

LANG, DV ;

NICOLLIAN, EH .

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[5]

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[6] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN .

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[7]

Heckingbottom R., 1973, RADIAT EFF, V17, P31

[8] INFLUENCE OF OXYGEN IMPLANTATION ON THE CARRIER CONCENTRATION PROFILE IN P-GAAS [J].

HUMERHAGER, T ;

ZWICKNAGL, P .

APPLIED PHYSICS LETTERS, 1988, 52 (01) :63-64

[9]

KASAHARA J, 1958, JPN J APPL PHYS, V22, pL373

[10]

Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153

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