BE+/O+-ION IMPLANTATION IN GAAS-ALGAAS HETEROJUNCTIONS

被引：7

作者：

ADACHI, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期

关键词：

D O I：

10.1063/1.337337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：959 / 964

页数：6

共 17 条

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[7]

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[8]

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WHELAN, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :473-475

[10] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN .

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