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BE+/O+-ION IMPLANTATION IN GAAS-ALGAAS HETEROJUNCTIONS

被引：7
作者：
ADACHI, S
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期
关键词：
D O I：
10.1063/1.337337
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：959 / 964
页数：6
相关论文
共 17 条
[11]   CARRIER REMOVAL PROFILES FROM OXYGEN IMPLANTED GAAS [J].
GECIM, S ;
SEALY, BJ ;
STEPHENS, KG .
ELECTRONICS LETTERS, 1978, 14 (10) :306-308
[12]   PILL-BOX CAPLESS THERMAL-HEAT-PULSE ANNEALING OF ION-IMPLANTED GAAS [J].
HAYDL, WH .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :78-81
[13]   ANALYSIS OF CARBON AND OXYGEN IN GAAS USING A SECONDARY ION MASS-SPECTROMETER EQUIPPED WITH A 20-K-CRYOPANEL PUMPING SYSTEM [J].
HOMMA, Y ;
ISHII, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (02) :356-360
[14]  
Lampert M.A., 1970, CURRENT INJECTION SO
[15]   ISOLATION CHARACTERISTICS IN SELECTIVELY O+ AND CR+ IMPLANTED GAAS [J].
NOJIMA, S .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01) :K9-K12
[16]  
TIWARI S, 1985, 1984 P GALL ARS REL, P83
[17]  
YAMAHATA S, UNPUB
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