RAPID THERMAL ANNEALING OF DUAL SI AND P IMPLANTS IN INP

[1] TEMPERATURE RESPONSE OF GAAS IN A RAPID THERMAL ANNEALING SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (02) : 450 - 451

[2] CHOUDHURY ANMM, 1987, APPL PHYS LETT, V50, P448, DOI 10.1063/1.98170

[3] DODABALAPUR A, 1987, J ELECTRON MATER, V16, P28383

[4] TYPE CONVERSION IN CLOSE CONTACT RAPID THERMAL ANNEALING OF SI-IMPLANTED INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) : 498 - 499

[5] COIMPLANTATION AND AUTOCOMPENSATION IN CLOSE CONTACT RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS-CR [J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 79 - 85

[6] INDIUM-PHOSPHIDE SOLAR-CELLS MADE BY ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1439 - 1440

[7] GROWTH AND RAPID THERMAL ANNEALING OF ALGAAS/INGAAS PSEUDOMORPHIC MODULATION-DOPED STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 681 - 683

[8] INTEGRATED AMPLIFIERS USING FULLY ION-IMPLANTED INP JFETS WITH HIGH TRANSCONDUCTANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) : 306 - 308

[9] KRAUTLE H, 1988, J APPL PHYS, V63, P4418, DOI 10.1063/1.340186

[10] Kroger F. A., 1974, CHEM IMPERFECT CRYST, V2

[1] TEMPERATURE RESPONSE OF GAAS IN A RAPID THERMAL ANNEALING SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (02) : 450 - 451

[2] CHOUDHURY ANMM, 1987, APPL PHYS LETT, V50, P448, DOI 10.1063/1.98170

[3] DODABALAPUR A, 1987, J ELECTRON MATER, V16, P28383

[4] TYPE CONVERSION IN CLOSE CONTACT RAPID THERMAL ANNEALING OF SI-IMPLANTED INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) : 498 - 499

[5] COIMPLANTATION AND AUTOCOMPENSATION IN CLOSE CONTACT RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS-CR [J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 79 - 85

[6] INDIUM-PHOSPHIDE SOLAR-CELLS MADE BY ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1439 - 1440

[7] GROWTH AND RAPID THERMAL ANNEALING OF ALGAAS/INGAAS PSEUDOMORPHIC MODULATION-DOPED STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 681 - 683

[8] INTEGRATED AMPLIFIERS USING FULLY ION-IMPLANTED INP JFETS WITH HIGH TRANSCONDUCTANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) : 306 - 308

[9] KRAUTLE H, 1988, J APPL PHYS, V63, P4418, DOI 10.1063/1.340186

[10] Kroger F. A., 1974, CHEM IMPERFECT CRYST, V2