COIMPLANTATION AND AUTOCOMPENSATION IN CLOSE CONTACT RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS-CR

被引：16

作者：

FARLEY, CW

KIM, TS

STREETMAN, BG

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 01期

关键词：

D O I：

10.1007/BF02667794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：79 / 85

页数：7

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