PREVENTION OF THERMAL SURFACE DAMAGE IN GAAS BY ENCAPSULATED ANNEALING IN AN ARSINE AMBIENT

被引：7

作者：

CAMPBELL, PM ^{[1
]}

AINA, O ^{[1
]}

BALIGA, BJ ^{[1
]}

机构：

[1] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12345

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 03期

关键词：

D O I：

10.1007/BF02655325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：125 / 131

页数：7

共 15 条

[1] APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J].

AMBRIDGE, T ;

STEVENSON, JL ;

REDSTALL, RM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :222-228

[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].

ARTHUR, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&

[3] USE OF A SURROUNDING P-TYPE RING TO DECREASE BACKGATE BIASING IN GAAS-MESFETS [J].

BLUM, AS ;

FLESNER, LD .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) :97-99

[4]

CAMPBELL B M, 1983, Bothalia, V14, P283

[5] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[6] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER [J].

GROVE, AS ;

LEISTIKO, O ;

SAH, CT .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (09) :985-&

[7] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

MAYER, JW ;

MITCHELL, IV ;

RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[8] CAPLESS ANNEAL OF ION-IMPLANTED GAAS IN CONTROLLED ARSENIC VAPOR [J].

KASAHARA, J ;

ARAI, M ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :541-543

[9] SIOXNY CAPPED ANNEALING FOR SI-IMPLANTED GAAS [J].

KUZUHARA, M ;

KOHZU, H .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :527-529

[10] EFFECT OF HEAT-TREATMENT OF GAAS ENCAPSULATED BY SIO-2 [J].

MOLNAR, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :767-768

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